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| RK4410 Transistors Switching (30V, 10A) RK4410 Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. External dimensions (Units : mm) + 0.4- 0.1 0.1 1.27 Max.1.75 + 5.0- 0.2 (5) (4) (8) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) (1) (2) (3) Gate Protection Diode. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain Absolute maximum ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Is Isp PD Tch Tstg Limits 30 20 10 40 10 40 1.3 5.2 2 150 -55+150 Unit V V A A A A A A W C C Total Power Dissipation(Tc=25C) Channel Temperature Storage Temperature Pw10ms, Duty cycle1% + 0.2- 0.1 Each lead has same dimensions Structure Silicon N-channel MOS FET + 3.9- 0.15 + 6.0- 0.3 + 0.5- 0.1 (1) 0.15 + 1.5- 0.1 RK4410 Transistors Thermal resistance (Ta=25C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit C / W Electrical characteristics (Ta=25C) Parameter Gate-Source Leakage Symbol IGSS Min. - 30 - 1.0 - Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RDS (on) l Yfs l Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd - - 10 - - - - - - - - - - Typ. - - - - 9 13 15 - 1750 950 450 20 55 100 70 44.8 5.9 12.2 Max. 10 - 10 2.5 12 18 20 - - - - - - - - 89.6 - - S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VGS=4.5V ID=10A, VGS=4V ID=10A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5A, VDD 15V VGS=10V RL=3 RGS=10 VDD=15V VGS=10V ID=10A Drain-Source Breakdown Voltage V (BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage IDSS VGS (th) Pulsed Body diode characteristics (Source-Drain Characteristics) (Ta=25C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD trr Qrr Min. - - - Typ. - 240 310 Max. 1.5 - - Unit V ns nC Test Conditions Is=5.2A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/s Pulsed RK4410 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 REVERSE DREIN CURRENT : IDR (A) Ta=125C 75C 25C 1 -25C 10 Ta=-25C 25C 75C 125C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=0V Pulsed 100 VDS=10V Pulsed 1 VGS=10V Pulsed 0.1 Ta=125C 75C 25C -25C 0.01 1 0.1 0.1 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 0.001 0.1 1 DRAIN CURRENT : ID (A) 10 SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) Fig.1 Reverse Drein Current vs. Source - Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS=4V Pulsed 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -50 -25 0 25 50 75 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS=10V ID=10A Pulsed 0.050 Ta=25C Pulsed 0.040 0.1 Ta=125C 75C 25C -25C 0.030 ID =10A 5A 0.01 0.020 0.010 0.001 0.1 1 DRAIN CURRENT : ID(A) 10 100 125 150 0.000 0 2 4 6 8 10 12 14 16 18 20 CHANNEL TEMPERATURE : Tch (C) GATE-SOURCE VOLTAGE : VGS(V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS (th) (V) 4.000 DRAIN-SOURCE VOLTAGE : VDS (V) 3.000 CAPACITANCE : C (pF) 25 VGS 20 15 10 5 0 0 VDS 5 Ta=25C VDD=24V ID=10A Pulsed 0 48 56 64 10 1000 Coss Crss 100 2.000 1.000 0.000 -50 -25 0 25 50 75 100 125 150 10 0.1 1 10 100 8 16 24 32 40 CHANNEL TEMPERATURE : Tch (C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 10000 Ta=25C f=1MHz VGS=0V Pulsed Ciss 30 15 RK4410 Transistors 1000 20 SWITCHING TIME : t (ns) 100 td (off) tf tr DRAIN CURRENT : ID (A) Ta=25C VDD=30V VGS=10V RG=10 Pulsed 18 16 14 12 10 8 6 4 2 VGS=6V VGS=4.5V VGS=4V VGS=3.5V Ta=25C Pulsed VGS=3V td (on) 10 VGS=2.5V 1 0.1 1 DRAIN CURRENT : ID (A) 10 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25C qth (ch-c) (t)=r (t) th (ch-c) qth (ch-c)=6.25C / W PW T 0.01 0.001 10 D=PW T 100 1m 10m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width |
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